Origin of the enhanced polarization in la and Mg co-substituted BiFeO 3 thin film during the fatigue process

Applied Physics Letters

Volumn 100, Issue 4, 2012, Pages

  Ke, Qingqing ^a   Kumar, Amit ^a   Lou, Xiaojie ^b   Zeng, Kaiyang ^a   Wang, John ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b XI'AN JIAOTONG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANOMALOUS BEHAVIOR; DEFECT EVOLUTION; ENHANCED POLARIZATION; FATIGUE BEHAVIOR; FATIGUE PROCESS; IMPEDANCE SPECTROSCOPY; LOWER ENERGY BARRIERS; METAL-DIELECTRIC INTERFACE; POLARIZATION FATIGUE; QUALITATIVE MODEL; SCHOTTKY BARRIERS; TEMPERATURE DEPENDENT;

OXYGEN VACANCIES; SCHOTTKY BARRIER DIODES; THIN FILMS;

POLARIZATION;

EID: 84863027821     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3678636     Document Type: Article

References (20)

1. G. Catalan and J. F. Scott, Adv. Mater. 21, 2463 (2009). 10.1002/adma.200802849
2. S. H. Baek, C. M. Folkman, J. W. Park, S. Lee, C. W. Bark, T. Tybell, and C. B. Eom, Adv. Mater. 23, 1621 (2011). 10.1002/adma.201003612
3. A. K. Tagantsev, I. Stolichnov, E. L. Colla, and N. Setter, J. Appl. Phys. 90, 1387 (2001). 10.1063/1.1381542
4. W. L. Warren, D. Dimos, B. A. Turtle, G. E. Pike, R. W. Schwartz, P. J. Clew, and D. C. McIntyre, J. Appl. Phys. 77, 6695 (1995). 10.1063/1.359083
5. M. Dawber and J. F. Scott, Appl. Phys. Lett. 76, 1060 (2000). 10.1063/1.125938
6. X. Du and I. W. Chen, J. Appl. Phys. 83, 7789 (1998). 10.1063/1.367953
7. Z. Wen, Y. Lv, D. Wu, and A. Li, Appl. Phys. Lett. 99, 012903 (2011). 10.1063/1.3609246
8. C. H. Sim, H. P. Soon, Z. H. Zhou, and J. Wang, Appl. Phys. Lett. 89, 122905 (2006). 10.1063/1.2347697 (Pubitemid 44439818)
9. M. Kohli, P. Muralt, and N. Setter, Appl. Phys. Lett. 72, 3217 (1998). 10.1063/1.121554 (Pubitemid 128677296)
10. J. Wu and J. Wang, J. Appl. Phys. 108, 024104 (2010). 10.1063/1.3452348
11. Q. Ke, X. Lou, Y. Wang, and J. Wang, Phys. Rev. B 82, 024102 (2010). 10.1103/PhysRevB.82.024102
12. J. F. Li, J. L. Wang, M. Wuttig, R. Ramesh, N. Wang, and B. Ruette, Appl. Phys. Lett. 84, 5261 (2004). 10.1063/1.1764944
13. Q. Y. Jiang, E. C. Subbarao, and L. E. Cross, J. Appl. Phys. 75, 7433 (1994). 10.1063/1.356637
14. C. Ang, Z. Yu, and L. E. Cross, Phys. Rev. B 62, 228 (2000). 10.1103/PhysRevB.62.228
15. J. Wu and J. Wang, J. Am. Ceram. Soc. 93, 2795 (2010). 10.1111/j.1551-2916.2010.03816.x
16. J. Daniels and K. H. Hardtl, Philips Res. Rep. 31, 489 (1976).
17. S. A. Long and R. N. Blumenthal, J. Am. Ceram. Soc. 54, 577 (1971). 10.1111/j.1151-2916.1971.tb12211.x
18. D. M. Smyth, J. Electroceram. 11, 89 (2003). 10.1023/B:JECR.0000015665. 07280.60
19. Y. Kim, C. Bae, K. Ryu, H. Ko, Y. K. Kim, S. Hong, and H. Shin, Appl. Phys. Lett. 94, 032907 (2009). 10.1063/1.3046786
20. P. Gonon and F. E. Kamel, Appl. Phys. Lett. 90, 232902 (2007). 10.1063/1.2746066 (Pubitemid 46960300)