Tunable n- and p-type doping of single-layer graphene by engineering its interaction with the SiO 2 support

Physica Status Solidi - Rapid Research Letters

Volumn 6, Issue 2, 2012, Pages 53-55

  Nourbakhsh, Amirhasan ^a,b   Cantoro, Mirco ^a   Li, Bing ^b   Müller, Robert ^a   de Feyter, Steven ^b   Heyns, Marc M ^a,b   Sels, Bert F ^b   de Gendt, Stefan ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Aminosilanes; Field effect transistors; Graphene; Raman spectroscopy

Indexed keywords

AMINOSILANES; CHARGE CONCENTRATION; ELECTRICAL MEASUREMENT; FIELD-EFFECT MOBILITIES; GRAPHENE DEVICES; N- AND P-TYPE DOPING; SINGLE LAYER;

ELECTRIC CHARGE; ELECTRIC FIELDS; FIELD EFFECT TRANSISTORS; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SELF ASSEMBLED MONOLAYERS; SILICON COMPOUNDS;

GRAPHENE;

EID: 84863021830     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.201105429     Document Type: Article

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