Hard breakdown mechanisms of compensated p-type and n-type single-crystalline silicon solar cells

Solid-State Electronics

Volumn 76, Issue , 2012, Pages 36-39

  Dubois, S ^a   Veirman, J ^a   Enjalbert, N ^a   Scheiblin, P ^b  

^a DIF   (France)

^b CEA LETI   (France)

Author keywords

Breakdown; Dopant; Silicon; Solar cell

Indexed keywords

AVALANCHE MECHANISM; BREAKDOWN; CZOCHRALSKI SILICON; DOPING CONCENTRATION; EMPIRICAL EXPRESSION; EXPERIMENTAL DATA; HARD BREAKDOWN; IONIZATION COEFFICIENT; P-TYPE; SILICON SAMPLES; SINGLE CRYSTALLINE SILICON;

BORON; DOPING (ADDITIVES); ELECTRIC BREAKDOWN; HOLE CONCENTRATION; IMPACT IONIZATION; NANOSTRUCTURED MATERIALS; PHOSPHORUS; SILICON; SOLAR CELLS;

SILICON SOLAR CELLS;

EID: 84863006286     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2012.05.033     Document Type: Article

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