Vertical silicon nanowires with atomic layer deposition with HfO 2 membrane for pH sensing application

Journal of Mechanics in Medicine and Biology

Volumn 11, Issue 5, 2011, Pages 959-966

  Lin, Yi Ting ^a   Yu, Yu Hong ^b   Chen, Yu ^b   Zhang, Guo Jun ^c   Zhu, Shi Yang ^c   Yang, Chia Ming ^d   Lu, Kua Yi ^e   Lai, Chao Sung ^a  

^a CHANG GUNG UNIVERSITY   (Taiwan)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c INSTITUTE OF MICROELECTRONICS   (Singapore)

^d Inotera Memories   (Taiwan)

^e MING CHUAN UNIVERSITY   (Taiwan)

Author keywords

electrolyteinsulatorsemiconductor (EIS); rapid thermal annealing (RTA); Silicon nanowire (SiNW)

Indexed keywords

ELECTROLYTEINSULATORSEMICONDUCTOR (EIS); FLAT-BAND VOLTAGE SHIFT; HAFNIUM DIOXIDE; HIGH-PRECISION; LINEAR RELATIONSHIPS; PH SENSING; POST-DEPOSITION; SENSING MEMBRANES; SENSING PROPERTY; SILICON NANOWIRES; SURFACE-TO-VOLUME RATIO; ULTRASENSITIVE;

BIOSENSORS; ELECTROLYTES; HAFNIUM OXIDES; NANOWIRES; PH SENSORS; RAPID THERMAL ANNEALING;

ATOMIC LAYER DEPOSITION;

EID: 84862944821     PISSN: 02195194     EISSN: None     Source Type: Journal    
DOI: 10.1142/S0219519411004897     Document Type: Conference Paper

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