Ultrathin strained-ge channel P-MOSFETs with high-k/metal gate and Sub-1-nm equivalent oxide thickness

IEEE Electron Device Letters

Volumn 33, Issue 7, 2012, Pages 943-945

  Hashemi, Pouya ^a,b   Chern, Winston ^a   Lee, Hyung Seok ^a   Teherani, James T ^a   Zhu, Yu ^b   Gonsalvez, Jemima ^b   Shahidi, Ghavam G ^b   Hoyt, Judy L ^a  

^a Massachusetts Institute of Technology Cambridge   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

Capacitance equivalent thickness (CET); high K; metal gate; mobility; ozone; SiGe; strained Ge (s Ge)

Indexed keywords

CAPACITANCE-EQUIVALENT THICKNESS; HIGH-K; METAL GATE; SIGE; STRAINED-GE;

CAPACITANCE; CARRIER MOBILITY; HOLE MOBILITY; MOSFET DEVICES; OZONE; SILICON;

GERMANIUM;

EID: 84862880540     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2195631     Document Type: Article

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