Impact energy dependence of defect formation in single-walled carbon nanotubes

Chemical Physics Letters

Volumn 541, Issue , 2012, Pages 92-95

  Zhang, Chao ^a,b   Mao, Fei ^a,b   Zhang, Feng Shou ^a,b,c   Zhang, Yanwen ^d,e  

^a BEIJING NORMAL UNIVERSITY   (China)

^b BEIJING RADIATION CENTER   (China)

^c CENTER OF THEORETICAL NUCLEAR PHYSICS   (China)

^d OAK RIDGE NATIONAL LABORATORY   (United States)

^e University of Tennessee   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

A-CARBON; AB INITIO METHOD; ATOMISTIC SIMULATIONS; DEFECT FORMATION; DEFECTS FORMATION; DISPLACEMENT THRESHOLD ENERGY; EMPIRICAL POTENTIALS; FORMATION ENERGIES; IMPACT ENERGY; REASONABLE VALUE; SINGLE VACANCIES; THRESHOLD ENERGY;

NANOTUBES; SINGLE-WALLED CARBON NANOTUBES (SWCN);

SURFACE DEFECTS;

EID: 84862842310     PISSN: 00092614     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cplett.2012.05.055     Document Type: Article

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