Micro humidity sensors based on ZnO-In 2O 3 thin films with high performances

Sensors and Actuators, B: Chemical

Volumn 165, Issue 1, 2012, Pages 76-81

  Liang, Qingcheng ^a   Xu, Hongliang ^b   Zhao, Jianxun ^a   Gao, Shang ^a  

^a CHANGCHUN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b NORTHEAST NORMAL UNIVERSITY   (China)

Author keywords

In 2O 3; Metal oxide semiconductors; Micro sensors; Radio frequency sputtering; ZnO

Indexed keywords

ACTIVE AREA; FOUR-ORDER; HIGH STABILITY; HUMIDITY DETECTION; HUMIDITY SENSING PROPERTY; METAL OXIDE SEMICONDUCTORS; RADIO-FREQUENCY SPUTTERING; RECOVERY TIME; SENSING FILMS; SENSOR PERFORMANCE; SIGNAL ELECTRODE; ZNO;

HUMIDITY SENSORS; MICROSENSORS; MOS DEVICES; PLATINUM; SILICON COMPOUNDS; THIN FILMS;

ZINC OXIDE;

EID: 84862828426     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.snb.2012.02.019     Document Type: Article

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