Three-dimensional global analysis of thermal stress and dislocations in a silicon ingot during a unidirectional solidification process with a square crucible

Journal of Crystal Growth

Volumn 312, Issue 22, 2010, Pages 3261-3266

  Chen, Xuejiang ^a,b   Nakano, Satoshi ^b   Kakimoto, Koichi ^b  

^a XI'AN JIAOTONG UNIVERSITY   (China)

^b KYUSHU UNIVERSITY   (Japan)

Author keywords

A1. Computer simulation; A1. Defects; A1. Solidification; A1. Stresses

Indexed keywords

A-THERMAL; A1. COMPUTER SIMULATION; A1. DEFECTS; A1. SOLIDIFICATION; A1. STRESSES; GLOBAL ANALYSIS; GLOBAL MODELS; MULTI-CRYSTALLINE SILICON; SILICON INGOT; SOLIDIFICATION PROCESS; STRESS LEVELS; THERMAL STRESS DISTRIBUTIONS; UNIDIRECTIONAL SOLIDIFICATION;

COMPUTATIONAL METHODS; CRUCIBLES; DEFECTS; INGOTS; POLYSILICON; SOLIDIFICATION; STRESS CONCENTRATION; THERMAL STRESS; THERMOELASTICITY;

THREE DIMENSIONAL;

EID: 77957837033     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.08.045     Document Type: Article

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