Reflection electron energy loss spectroscopy for ultrathin gate oxide materials

Surface and Interface Analysis

Volumn 44, Issue 6, 2012, Pages 623-627

  Shin, Hye Chung ^a   Tahir, Dahlang ^b   Seo, Soonjoo ^a   Denny, Yus Rama ^a   Oh, Suhk Kun ^a   Kang, Hee Jae ^a   Heo, Sung ^c   Chung, Jae Gwan ^c   Lee, Jae Cheol ^c   Tougaard, Sven ^d  

^a Chungbuk National University   (South Korea)

^b HASANUDDIN UNIVERSITY   (Indonesia)

^c Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^d UNIVERSITY OF SOUTHERN DENMARK   (Denmark)

Author keywords

electronic and optical properties; HfZrO 4 gate oxide thin film; REELS

Indexed keywords

ATOMIC LAYER; BAND ALIGNMENTS; CONDUCTION BAND OFFSET; DEVICE APPLICATION; ELECTRON BARRIER; GATE OXIDE; INELASTIC MEAN FREE PATH; REFLECTION ELECTRON ENERGY LOSS SPECTROSCOPIES; SI(1 0 0); ULTRA THIN GATE OXIDE; VALENCE BAND OFFSETS;

ATOMIC LAYER DEPOSITION; CHARACTERIZATION; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRON SCATTERING; HETEROJUNCTIONS; OPTICAL PROPERTIES; REELS; THIN FILMS;

GATES (TRANSISTOR);

EID: 84862810203     PISSN: 01422421     EISSN: 10969918     Source Type: Journal    
DOI: 10.1002/sia.3861     Document Type: Conference Paper

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