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Volumn 60, Issue 5, 2012, Pages 2097-2103

Electrochemically controlled fabrication of lightly doped porous Si nanowire arrays with excellent antireflective and self-cleaning properties

Author keywords

Antireflective; Nanowire; Porous; Self cleaning; Si

Indexed keywords

ANTIREFLECTIVE; CURRENT-VOLTAGE MEASUREMENTS; DOPING LEVELS; ELECTROCHEMICAL PROCESS; ELECTROCHEMICAL ROUTES; ELECTROCHEMICAL TREATMENTS; ELECTROLESS CHEMICAL ETCHING; PHOTOLUMINESCENCE SPECTRUM; PORE FORMATION; POROUS; POROUS SI; POROUS STRUCTURES; QUANTUM CONFINEMENT EFFECTS; RAMAN PEAK; REFLECTIVITY SPECTRA; SELF-CLEANING; SELF-CLEANING PROPERTIES; SI WAFER; SINGLE-CRYSTALLINE; SUPERHYDROPHOBIC; TRANSMISSION ELECTRON MICROSCOPY IMAGES; WAVELENGTH RANGES;

EID: 84862785796     PISSN: 13596454     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.actamat.2012.01.012     Document Type: Article
Times cited : (23)

References (26)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.