|
Volumn 60, Issue 5, 2012, Pages 2097-2103
|
Electrochemically controlled fabrication of lightly doped porous Si nanowire arrays with excellent antireflective and self-cleaning properties
|
Author keywords
Antireflective; Nanowire; Porous; Self cleaning; Si
|
Indexed keywords
ANTIREFLECTIVE;
CURRENT-VOLTAGE MEASUREMENTS;
DOPING LEVELS;
ELECTROCHEMICAL PROCESS;
ELECTROCHEMICAL ROUTES;
ELECTROCHEMICAL TREATMENTS;
ELECTROLESS CHEMICAL ETCHING;
PHOTOLUMINESCENCE SPECTRUM;
PORE FORMATION;
POROUS;
POROUS SI;
POROUS STRUCTURES;
QUANTUM CONFINEMENT EFFECTS;
RAMAN PEAK;
REFLECTIVITY SPECTRA;
SELF-CLEANING;
SELF-CLEANING PROPERTIES;
SI WAFER;
SINGLE-CRYSTALLINE;
SUPERHYDROPHOBIC;
TRANSMISSION ELECTRON MICROSCOPY IMAGES;
WAVELENGTH RANGES;
CONTACT ANGLE;
ELECTRIC PROPERTIES;
NANOWIRES;
OPTOELECTRONIC DEVICES;
POROUS SILICON;
REFLECTION;
SCANNING ELECTRON MICROSCOPY;
SILICON;
SILICON WAFERS;
SURFACE PROPERTIES;
THERMIONIC EMISSION;
TRANSMISSION ELECTRON MICROSCOPY;
CLEANING;
|
EID: 84862785796
PISSN: 13596454
EISSN: None
Source Type: Journal
DOI: 10.1016/j.actamat.2012.01.012 Document Type: Article |
Times cited : (23)
|
References (26)
|