Strong mid-infrared optical absorption by supersaturated sulfur doping in silicon

AIP Conference Proceedings

Volumn 1399, Issue , 2011, Pages 51-52

  Umezu, I ^a   Kohno, A ^b   Warrender, J M ^c   Takatori, Y ^a   Hirao, Y ^a   Nakagawa, S ^a   Sugimura, A ^a   Charnvanichborikarn, S ^d   Williams, J S ^d   Aziz, M J ^e  

^a KONAN UNIVERSITY   (Japan)

^b FUKUOKA UNIVERSITY   (Japan)

^c U S Army Armaments Research Development Engineering Center Benét Laboratories   (United States)

^d AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^e HARVARD UNIVERSITY   (United States)

Author keywords

impurity band; optical absorption; Pulsed laser melting; silicon; solidification; sulfur; supersaturation

Indexed keywords

EID: 84862777011     PISSN: 0094243X     EISSN: 15517616     Source Type: Conference Proceeding    
DOI: 10.1063/1.3666252     Document Type: Conference Paper

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