Dielectric properties of Si 3N 4-SiCN composite ceramics in X-band

Ceramics International

Volumn 38, Issue 7, 2012, Pages 6015-6020

  Li, Quan ^a   Yin, Xiaowei ^a   Feng, Liyun ^a  

^a NORTHWESTERN POLYTECHNICAL UNIVERSITY   (China)

Author keywords

C: Dielectric property; D. Si 3N 4; D. SiC nano crystal; Polymer derived ceramics

Indexed keywords

ANNEALING TEMPERATURES; COMPOSITE CERAMIC; D. SI 3N 4; D. SIC NANO-CRYSTAL; DIELECTRIC POLARIZATION; ELECTRIC DIPOLE; ELECTRICAL CONDUCTIVITY; FREQUENCY RANGES; GRAIN BOUNDARY RELAXATION; IN-SITU; MICROWAVE ABSORBING MATERIALS; N-DOPED; POLARIZATION RELAXATION; POLYMER-DERIVED CERAMICS; POLYSILAZANE; POROUS SI; PRECURSOR INFILTRATION PYROLYSIS;

ANNEALING; CERAMIC MATERIALS; ELECTRIC CONDUCTIVITY; GRAIN BOUNDARIES; PERMITTIVITY; POROUS SILICON; RELAXATION PROCESSES; SILICON; SILICON CARBIDE;

DIELECTRIC PROPERTIES OF SOLIDS;

EID: 84862683286     PISSN: 02728842     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ceramint.2012.03.045     Document Type: Article

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