Chemisorption on semiconductors: The role of quantum corrections on the space charge regions in multiple dimensions

Applied Physics Letters

Volumn 100, Issue 18, 2012, Pages

  Ciucci, Francesco ^a   De Falco, Carlo ^b   Guzman, Marcelo I ^c   Lee, Sara ^d   Honda, Tomonori ^e  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^b POLITECNICO DI MILANO   (Italy)

^c UNIVERSITY OF KENTUCKY   (United States)

^d UNIVERSITY OF HEIDELBERG   (Germany)

^e Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CDS; DIFFERENTIAL CAPACITANCE; MULTIPLE DIMENSIONS; N-DOPED; NANO SCALE; NUMERICAL RESULTS; OXYGEN PARTIAL PRESSURE; POISSON-BOLTZMANN APPROACH; QUANTUM CORRECTION; QUANTUM MODELS; SPACE CHARGE REGIONS;

CADMIUM COMPOUNDS; CADMIUM SULFIDE; CAPACITANCE; POISSON EQUATION;

CHEMISORPTION;

EID: 84862514378     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4709483     Document Type: Article

References (17)

1. J. Bisquert, Phys. Chem. Chem. Phys. 5, 5360 (2003). 10.1039/b310907k
2. Y. Cui, Q. Wei, H. Park, and C. M. Lieber, Science 293, 1289 (2001). 10.1126/science.1062711
3. N. Balke, S. Jesse, A. Morozovska, E. Eliseev, W. Chung, Y. Kim, L. Adamczyk, R. Garcia, N. Dudney, and S. Kalinin, Nat. Nanotechnol. 5, 749 (2010). 10.1038/nnano.2010.174
4. A. Kumar, F. Ciucci, A. N. Morozovska, S. V. Kalinin, and S. Jesse, Nat. Chem. 3, 707 (2011). 10.1038/nchem.1112
5. A. Rothschild, Y. Komem, and N. Ashkenasy, J. Appl. Phys. 92, 7090 (2002). 10.1063/1.1519946
6. T. Wolkenstein, Electronic Processes on Semiconductor Surfaces During Chemisorption (Springer, 1991).
7. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley-Interscience, New York, 1981).
8. N. Yamazoe and K. Shimanoe, J. Electrochem. Soc. 155, J85 (2008). 10.1149/1.2832655
9. N. Yamazoe and K. Shimanoe, Sens. Actuators B 138, 100 (2009). 10.1016/j.snb.2009.01.023
10. I. Langmuir, J. Am. Chem. Soc. 38, 2221 (1916). 10.1021/ja02268a002
11. A. Rothschild, Y. Komem, A. Levakov, N. Ashkenasy, and Y. Shapira, Appl. Phys. Lett. 82, 574 (2003). 10.1063/1.1539556
12. A. Rothschild and Y. Komem, Sens. Actuators B 93, 362 (2003). 10.1016/S0925-4005(03)00212-0
13. A. Rothschild and Y. Komem, J. Appl. Phys. 95, 6374 (2004). 10.1063/1.1728314
14. A. Rothschild and Y. Komem, J. Electroceram. 13, 697 (2004). 10.1007/s10832-004-5178-8
15. W. Monch, Semiconductor Surfaces and Interfaces (Springer, 1995).
16. C. de Falco, E. Gatti, A. L. Lacaita, and R. Sacco, J. Comput. Phys. 204, 533 (2005). 10.1016/j.jcp.2004.10.029
17. L. Wang, D. Wang, and P. M. Asbeck, Solid-State Electron. 50, 1732 (2006). 10.1016/j.sse.2006.09.013