Chemical capacitance of nanostructured semiconductors: Its origin and significance for nanocomposite solar cells

Physical Chemistry Chemical Physics

Volumn 5, Issue 24, 2003, Pages 5360-5364

  Bisquert, Juan ^a  

^a UNIVERSITAT JAUME I   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

TITANIUM DIOXIDE;

ARTICLE; CHEMICAL STRUCTURE; CRYSTAL; DYNAMICS; ELECTRIC CAPACITANCE; ELECTRIC POTENTIAL; ELECTROCHEMISTRY; SEMICONDUCTOR; SOLAR ENERGY;

EID: 0346308455     PISSN: 14639076     EISSN: None     Source Type: Journal    
DOI: 10.1039/b310907k     Document Type: Article

References (27)

1. M. Grätzel, Nature, 2001, 414, 338.
2. A. Zaban, A. Meier and B. A. Gregg, J. Phys. Chem. B, 1997, 101, 7985.
3. J. van de Lagemaat, N.-G. Park and A. J. Frank, J. Phys. Chem. B, 2000, 104, 2044.
4. F. Fabregat-Santiago, G. Garcia-Belmonte, J. Bisquert, A. Zaban and P. Salvador, J. Phys. Chem. B, 2002, 106, 334.
5. F. Fabregat-Santiago, I. Mora-Seró, G. Garcia-Belmonte and J. Bisquert, J. Phys. Chem. B, 2003, 107, 758.
6. A. L. Roest, J. J. Kelly, D. Vanmaekelbergh and E. A. Meulenkamp, Phys. Rev. Lett., 2002, 89, 36 801.
7. M. Büttiker, H. Thomas and A. Prêtre, Phys. Lett. A, 1993, 180, 364.
8. J. Bisquert, G. Garcia-Belmonte and F. Fabregat Santiago, J. Solid State Electrochem., 1999, 3, 337.
9. M. Turrión, J. Bisquert and P. Salvador, J. Phys. Chem. B, 2003. 107, 9397.
10. G. Oster, A. Perelson and A. Katchalsky, Nature, 1971, 234, 393.
11. J. Jamnik and J. Maier, Phys. Chem. Chem. Phys., 2001, 3, 1668.
12. L. M. Peter, N. W. Duffy, R. L. Wang and K. G. U. Wijayantha, J. Electroanal. Chem., 2002, 524-525, 127.
13. R. P. Buck and C. Mundt, Electrochim. Acta, 1999, 44, 1999.
14. C.-T. Sah, Proc. IEEE, 1967, 55, 654.
15. M. S. Tyagi, Introduction to Semiconductor Materials and Devizes, John Wiley and Sons, New York, 1991.
16. J. Bisquert, G. Garcia-Belmonte, F. Fabregat-Santiago and P. R. Bueno, J. Electroanal. Chem., 1999, 475, 152.
17. J. Bisquert, J. Phys. Chem. B, 2002, 106, 325.
18. S K. Schwarzburg and F. Willig, J. Phys. Chem. B, 2003, 107, 3552.
19. G. Kron, T. Egerter, J. H. Werner and W. Rau, J. Phys. Chem. B, 2003, 107, 3556.
20. J. Bisquert, S. Rühle, D. Cahen, G. Hodes and A. Zaban, 2003, in preparation.
21. X. Zhao, J. Wang and H. Guo, Phys. Rev. B, 1999, 60, 16 730.
22. G. Schlichthörl, S. Y. Huang, J. Sprague and A. J. Frank, J. Phys. Chem. B, 1997, 101, 8141.
23. G. Franco, J. Gehring, L. M. Peter, E. A. Ponomarev and I. Uhlendorf, J. Phys. Chem. B, 1999, 103, 692.
24. L. Dloczik, O. Ileperuma, I. Lauerman, L. M. Peter, E. A. Ponomarev, G. Redmond, N. J. Shaw and I. Uhlendorf, J. Phys. Chem. B, 1997, 101, 10 281.
25. F. Fabregat-Santiago, G. Garcia-Belmonte, J. Bisquert, P. Bogdanoff and A. Zaban, J. Electrochem. Soc., 2003, 150, E293.
26. J. Garcia-Cañadas, F. Fabregat-Santiago, J. Kapla, J. Bisquert, G. Garcia-Belmonte, I. Mora-Seró and M. O. M. Edwards, Electrochim. Acta, 2003, to be published.
27. M. A. Green, Physica E, 2002, 14, 11.