Charge-carrier mediated ferromagnetism in Mo-doped In 2O 3 films

Applied Physics Letters

Volumn 100, Issue 22, 2012, Pages

  Park, Chang Yup ^a   You, Chun Yeol ^b   Jeon, Kun Rok ^a   Shin, Sung Chul ^a,c  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Inha University   (South Korea)

^c Daegu Gyeongbuk Institute of Science and Technology   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING CONCENTRATION; ELECTRON CONCENTRATION; HALL EFFECT MEASUREMENT; INDIRECT EXCHANGE INTERACTIONS; LINEAR RELATIONSHIPS; METALLIC BEHAVIORS; MINIMUM VALUE; MO CONCENTRATION; TEMPERATURE-DEPENDENT RESISTIVITY;

ELECTRIC CONDUCTIVITY; FERROMAGNETISM; SATURATION MAGNETIZATION;

SEMICONDUCTOR DOPING;

EID: 84862146433     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4722928     Document Type: Article

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