Structural and luminescent characteristics of pulsed laser deposited Eu 3+-doped Y 2O 3 thin films

Philosophical Magazine

Volumn 92, Issue 14, 2012, Pages 1777-1787

  Anoop, G ^a,b   Minikrishna, K ^a,c   Jayaraj, M K ^a  

^a Department of Physics   (India)

^b Chung Ang University   (South Korea)

^c Vimala College   (India)

Author keywords

photoluminescence; pulsed laser ablation; yttria thin film

Indexed keywords

AS-DEPOSITED FILMS; CHARGE TRANSFER BANDS; CRYSTALLINITIES; DEPOSITED FILMS; EFFECT OF OXYGEN; FUSED SILICA SUBSTRATES; LUMINESCENT CHARACTERISTICS; MICROSTRUCTURE ANALYSIS; OPTICAL CHARACTERISTICS; OXYGEN PARTIAL PRESSURE; PHOTOLUMINESCENCE EXCITATION SPECTRUM; PREFERRED ORIENTATIONS; RED LUMINESCENCE; SUBSTRATE TEMPERATURE; VARIOUS SUBSTRATES;

CHARGE TRANSFER; EUROPIUM; PARTIAL PRESSURE; PHOTOLUMINESCENCE; POSITIVE IONS; PULSED LASER DEPOSITION; PULSED LASERS; SEMICONDUCTING INDIUM COMPOUNDS; SURFACE ROUGHNESS; THIN FILMS;

SUBSTRATES;

EID: 84862082616     PISSN: 14786435     EISSN: 14786443     Source Type: Journal    
DOI: 10.1080/14786435.2012.657712     Document Type: Article

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