Thermoelectric properties of Ho-doped Bi 0.88Sb 0.12

Journal of Materials Science

Volumn 47, Issue 15, 2012, Pages 5729-5734

  Lukas, K C ^a   Joshi, G ^a   Modic, K ^b   Ren, Z F ^a   Opeil, C P ^a  

^a BOSTON COLLEGE   (United States)

^b LOS ALAMOS NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LEVELS; DOPED SAMPLE; ELECTRICAL RESISTIVITY; GRAIN SIZE; PARENT COMPOUNDS; SINGLE PHASE; THERMOELECTRIC PROPERTIES;

ANTIMONY; FOAMS; THERMAL CONDUCTIVITY;

BISMUTH;

EID: 84861896367     PISSN: 00222461     EISSN: 15734803     Source Type: Journal    
DOI: 10.1007/s10853-012-6463-6     Document Type: Article

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