Tunable electron and hole doping in FeCl 3 intercalated graphene

Applied Physics Letters

Volumn 100, Issue 21, 2012, Pages

  Nathaniel, James ^a   Wang, Xiao Qian ^a  

^a CLARK ATLANTA UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED BIAS; BI-LAYER; DEVICE APPLICATION; ELECTRIC BIAS; ELECTRON-DOPED; ELECTRONIC CHARACTERISTICS; GRAPHENE LAYERS; HOLE-DOPING; VAN DER WAALS INTERACTIONS;

CALCULATIONS; CHEMICAL BONDS; ELECTRONEGATIVITY; ELECTRONIC STRUCTURE; SEMICONDUCTOR DOPING; VAN DER WAALS FORCES;

GRAPHENE;

EID: 84861821148     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4722817     Document Type: Article

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