A memristor based on current-induced domain-wall motion in a nanostructured giant magnetoresistance device

Journal of Applied Physics

Volumn 111, Issue 7, 2012, Pages

  Münchenberger, Jana ^a   Reiss, Günter ^a   Thomas, Andy ^a,b  

^a BIELEFELD UNIVERSITY   (Germany)

^b UNIVERSITY OF HAMBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRITICAL THRESHOLD; CURRENT-INDUCED DOMAIN-WALL MOTIONS; DOMAIN WALL MOTION; E-BEAM LITHOGRAPHY; EXTERNAL FIELDS; FREE LAYERS; ION BEAM ETCHING; MEMRISTOR; MICROMAGNETIC SIMULATIONS; MR RATIO; NANO-STRUCTURED; NARROW STRIPE; ROOM TEMPERATURE; SPIN-VALVE STRUCTURES; TIME-SCALES;

PHYSICAL PROPERTIES; PHYSICS;

GIANT MAGNETORESISTANCE;

EID: 84861753182     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3671438     Document Type: Conference Paper

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