Current-induced domain wall nucleation and its pinning characteristics at a notch in a spin-valve nanowire

Nanotechnology

Volumn 20, Issue 12, 2009, Pages

  Jang, Youngman ^a   Yoon, Seungha ^a   Lee, Kisu ^a   Lee, Seungkyo ^a   Nam, Chunghee ^b   Cho, B K ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b USA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CU LAYERS; DOMAIN-WALL; POLARITY DEPENDENCES; SPIN STRUCTURES; SPIN VALVES;

NANOWIRES; SPIN DYNAMICS;

DIELECTRIC WAVEGUIDES;

COPPER; NANOWIRE; SPIN VALVE NANOWIRE; UNCLASSIFIED DRUG;

ARTICLE; DOMAIN WALL PINNING; ELECTRIC CURRENT; ELECTRONICS; FLOW KINETICS; MAGNETIC FIELD; MATHEMATICAL ANALYSIS; NANOTECHNOLOGY; NONHUMAN; OERSTED FIELD; POLARIZATION; PRIORITY JOURNAL;

EID: 65549103746     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/20/12/125401     Document Type: Article

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