Observation of weak temperature dependence of spin diffusion length in highly-doped Si by using a non-local 3-terminal method

Journal of Applied Physics

Volumn 111, Issue 7, 2012, Pages

  Kameno, M ^a   Shikoh, E ^a   Oikawa, T ^b   Sasaki, T ^b   Suzuki, T ^c   Suzuki, Y ^a   Shiraishi, M ^a  

^a OSAKA UNIVERSITY   (Japan)

^b TDK CORPORATION   (Japan)

^c Akita Research Institute of Advanced Technology   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EXPERIMENTAL INVESTIGATIONS; EXTERNAL ELECTRIC FIELD; N TYPE SILICON; NON-METALLIC; NONLOCAL; SPIN DRIFT; SPIN TRANSPORT; SPIN-DIFFUSION LENGTH; TEMPERATURE DEPENDENCE;

DIFFUSION; SILICON; TRANSPORT PROPERTIES;

TEMPERATURE DISTRIBUTION;

EID: 84861752862     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3680096     Document Type: Conference Paper

References (13)

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