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Volumn 33, Issue 6, 2012, Pages 818-820

Improvement of the performance and stability of oxide semiconductor thin-film transistors using double-stacked active layers

Author keywords

Amorphous semiconductors; thin film transistors (TFTs)

Indexed keywords

ACTIVE LAYER; AMORPHOUS OXIDE SEMICONDUCTOR (AOS); FIELD-EFFECT MOBILITIES; INDIUM ZINC OXIDES; OXIDE SEMICONDUCTOR; THIN-FILM TRANSISTOR (TFTS);

EID: 84861664335     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2190036     Document Type: Article
Times cited : (69)

References (10)
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    • (1980) Jpn. J. Appl. Phys. , vol.19 , Issue.5
    • Mimura, T.1    Hiyamizu, S.2    Fujii, T.3    Nanbu, K.4
  • 9
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    • Work function of transparent conducting multicomponent oxide thin films prepared by magnetron sputtering
    • Oct.
    • T. Minami, T. Miyata, and T. Yamamoto, "Work function of transparent conducting multicomponent oxide thin films prepared by magnetron sputtering," Surf. Coat. Technol., vol. 108/109, no. 10, pp. 583-587, Oct. 1998.
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    • T. Kamiya, K. Nomura, and H. Hosono, "Origins of high mobility and low operation voltage of amorphous oxide TFTs: Electronic structure, electron transport, defects and doping," J. Display Technol., vol. 5, no. 7, pp. 273-288, Jul. 2009.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.