Highly stable amorphous indium gallium zinc oxide thin-film transistors with N 2O plasma treatment

49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011

Volumn 3, Issue , 2011, Pages 1170-1172

  Yim, Hoon ^a   Kim, Dae Hwan ^a   Choi, SeungChan ^a   Choi, ByungGook ^a   Lee, SuI ^a   Kim, SungKi ^a   Park, Kwon Shik ^a   Bae, Jong Uk ^a   Kim, Chang Dong ^a   Jun, Myungchul ^a   Hwang, Yongkee ^a  

^a LG Display Co Ltd   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS INGAZNO; BACKPLANE TECHNOLOGY; FABRICATION PROCESS; INDIUM GALLIUM ZINC OXIDES; INITIAL DEPOSITIONS; PLASMA TREATMENT; STABLE PROCESS; THIN-FILM TRANSISTOR (TFTS);

AMORPHOUS SEMICONDUCTORS; EXHIBITIONS; PLASMA APPLICATIONS; PLASMA STABILITY; STABILITY CRITERIA;

THIN FILM TRANSISTORS;

EID: 84860876422     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. H. Hosono, Journal of Non-Crystalline Solids 352 (2006) 851.
2. J. Jae Kyeong, Y. Hui Won, J. Jong Han, M. Yeon-Gon, and K. Hye Dong, Applied Physics Letters 93 (2008) 123508.
3. DaeHwan Kim, Hoon Yim, Seung-Min Lee, Sung Ki Kim, Kwon-Shik Park, Chang-Dong Kim P-201 SID 2010 digest
4. T. C. Fung, K. Abe, H. Kumomi and J. Kanicki, Jounal of Display Technology, Vol. 5, No 12, 452