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Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 30, Issue 2, 2012, Pages

Growth of GaNxAsyP1-x-y alloys on GaP(100) by gas-source molecular beam epitaxy

(5) Kuang, Yan Jin a Chen, San Wen a Li, Hua b Sinha, Sunil K a Tu, Charles Wuching b

a UNIVERSITY OF CALIFORNIA (United States)

b UNIVERSITY OF CALIFORNIA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; RAPID THERMAL ANNEALING; X RAY DIFFRACTION;

DEFECT STATE; DILUTE NITRIDES; GAAS; GROWTH OF GAN; HIGH-ENERGY ELECTRON; IN-SITU; METAMORPHIC BUFFERS; N CONTENT; OPTICAL PERFORMANCE; PEAK POSITION; PL INTENSITY; ROOM TEMPERATURE; ROOM-TEMPERATURE PHOTOLUMINESCENCE; S SHAPE; TEMPERATURE DEPENDENT;

GALLIUM ALLOYS;

EID: 84861592497 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3680603 Document Type: Article

Times cited : (15)

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