Extraction of large valence-band energy offsets and comparison to theoretical values for strained-Si/strained-Ge type-II heterostructures on relaxed SiGe substrates

Physical Review B - Condensed Matter and Materials Physics

Volumn 85, Issue 20, 2012, Pages

  Teherani, James T ^a   Chern, Winston ^a   Antoniadis, Dimitri A ^a   Hoyt, Judy L ^a   Ruiz, Liliana ^b   Poweleit, Christian D ^c   Menéndez, José ^c  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^b UNIVERSITY OF TEXAS AT BROWNSVILLE   (United States)

^c ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84861551925     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.85.205308     Document Type: Article

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