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Volumn 8326, Issue , 2012, Pages

Extending the DRAM and FLASH memory technologies to 10nm and beyond

Author keywords

Double patterning; DRAM; EUV; Multiple patterning; NAND; Patterning

Indexed keywords

DOUBLE PATTERNING; EUV; MULTIPLE PATTERNING; NAND; PATTERNING;

EID: 84861496215     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.920053     Document Type: Conference Paper
Times cited : (30)

References (7)
  • 2
    • 68249161195 scopus 로고    scopus 로고
    • A new investigation of data retention time in truly nanoscaled DRAMs
    • Kim, K. et al., "A new investigation of data retention time in truly nanoscaled DRAMs", Electron Device Letters, Volume 30, 846-848 (2009)
    • (2009) Electron Device Letters , vol.30 , pp. 846-848
    • Kim, K.1
  • 3
    • 49049108116 scopus 로고    scopus 로고
    • Future memory technology: Challeges and opportunities
    • Kim, K., "Future memory technology: challeges and opportunities", VLSI-TSA, 5-9 (2008)
    • (2008) VLSI-TSA , pp. 5-9
    • Kim, K.1
  • 5
    • 0035368150 scopus 로고    scopus 로고
    • Novel cell transistor using retracted Si3N4-liner STI for the improvement of data retention time in gigabit density DRAM and beyond
    • Lee, J. et al., "Novel cell transistor using retracted Si3N4-liner STI for the improvement of data retention time in gigabit density DRAM and beyond ", IEEE Transactions on Electron Devices, Volume 48(6), 1152-1158 (2001)
    • (2001) IEEE Transactions on Electron Devices , vol.48 , Issue.6 , pp. 1152-1158
    • Lee, J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.