A new investigation of data retention time in truly nanoscaled DRAMs

IEEE Electron Device Letters

Volumn 30, Issue 8, 2009, Pages 846-848

  Kim, Kinam ^a   Lee, Jooyoung ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

Data retention time; DRAM; Gate induced drain leakage (GIDL) currents; Recess channel array transistor (RCAT); Trap assisted tunneling (TAT)

Indexed keywords

DATA RETENTION TIME; DRAM; GATE-INDUCED DRAIN LEAKAGE (GIDL) CURRENTS; RECESS CHANNEL ARRAY TRANSISTOR (RCAT); TRAP-ASSISTED TUNNELING (TAT);

CELL MEMBRANES; DISTRIBUTION FUNCTIONS; LEAKAGE CURRENTS; NORMAL DISTRIBUTION; TUNNELING (EXCAVATION); WIND TUNNELS;

DYNAMIC RANDOM ACCESS STORAGE;

EID: 68249161195     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2023248     Document Type: Article

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