Insertion strategy for EUV lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 8322, Issue , 2012, Pages

  Wood, Obert ^a   Arnold, John ^b   Brunner, Timothy ^b   Burkhardt, Martin ^b   Chen, James H C ^b   Civay, Deniz ^a   Fan, Susan S C ^b   Gallagher, Emily ^a   Halle, Scott ^b   He, Ming ^b   Higgins, Craig ^a   Kato, Hirokazu ^c   Kye, Jongwook ^a   Koay, Chiew Seng ^b   Landie, Guillaume ^d   Leung, Pak ^a   McIntyre, Gregory ^b   Nagai, Satoshi ^c   Petrillo, Karen ^b   Raghunathan, Sudhar ^a   Schlief, Ralph ^a   Sun, Lei ^a   Wagner, Alfred ^e   Wallow, Tom ^a   Yin, Yunpeng ^b   Zhu, Xuelian ^a   Colburn, Matthew ^b   Corliss, Daniel ^b   Smolinski, Cecilia ^b   more..

^a IBM MICROELECTRONICS   (United States)

^b IBM   (United States)

^c Toshiba America Inc   (United States)

^d STMICROELECTRONICS   (Italy)

^e IBM RESEARCH   (United States)

Author keywords

EUV technology status; EUVL; EUVL insertion; EUVL patterning; Extreme ultraviolet lithography

Indexed keywords

193-NM IMMERSION; CRITICAL ELEMENTS; DARK-FIELD; DEFECT-FREE; END-USER PERSPECTIVE; EUV MASK; EUV MASK BLANKS; EUV TECHNOLOGY STATUS; EXTREME ULTRAVIOLETS; MANUFACTURING IS; NUMERICAL APERTURE; PATTERN DENSITY; PROCESS WINDOW; RAYLEIGH; TECHNOLOGY NODES;

LITHOGRAPHY; LOGIC DEVICES; NANOTECHNOLOGY; PHOTOMASKS;

EXTREME ULTRAVIOLET LITHOGRAPHY;

EID: 84861495537     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.916292     Document Type: Conference Paper

References (12)

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