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Volumn 7271, Issue , 2009, Pages
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Comparative study of DRAM cell patterning between ArF immersion and EUV lithography
a
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Author keywords
EUVL; Flare; Immersion lithography; Shadowing
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Indexed keywords
ARF IMMERSION LITHOGRAPHY;
ATTENUATED PSM;
BRICK WALL;
CD UNIFORMITY;
COMMUNITY IS;
COMPARATIVE STUDIES;
CONTACT HOLES;
DESIGN RULES;
DEVELOPMENT STAGES;
DEVICE APPLICATION;
DIFFUSED AERIAL IMAGE MODEL;
DOUBLE PATTERNING;
DRAM CELLS;
ETCH PROCESS;
EUV LITHOGRAPHY;
EUV MASK;
EUVL;
FLARE;
FULL FIELD SCANNERS;
HARD MASKS;
IMMERSION LITHOGRAPHY;
IMMERSION SCANNERS;
LINE-AND-SPACE;
LINE-AND-SPACE PATTERNS;
LITHOGRAPHY PROCESS;
LITHOGRAPHY SIMULATION;
MASK ERROR ENHANCEMENT FACTORS;
MASK MTT;
MASK TOPOGRAPHY EFFECT;
OBLIQUE ILLUMINATION;
OPTICAL LITHOGRAPHY;
PATTERN DIRECTION;
PATTERN FIDELITY;
PATTERN POSITION;
PATTERN SHAPE;
PATTERNING TECHNOLOGY;
PHASE-SHIFT MASK;
PRINTING PERFORMANCE;
PROCESS MARGINS;
PROCESS WINDOW;
SHADOWING;
SHADOWING EFFECTS;
STORAGE NODES;
TARGET PATTERNS;
TECHNOLOGY NODES;
TELECENTRICITY;
TWO-DIMENSIONAL PATTERNS;
BRICK;
BRICKMAKING;
CELLS;
DATA STORAGE EQUIPMENT;
DYNAMIC RANDOM ACCESS STORAGE;
EXPERIMENTS;
LITHOGRAPHY;
PHOTOMASKS;
SCANNING;
TARGETS;
TECHNOLOGY;
TWO DIMENSIONAL;
ULTRAVIOLET DEVICES;
EXTREME ULTRAVIOLET LITHOGRAPHY;
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EID: 67149144872
PISSN: 0277786X
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1117/12.814378 Document Type: Conference Paper |
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Times cited : (12)
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References (4)
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