Low defect density bulk AlN substrates for high performance electronics and optoelectronics

Materials Science Forum

Volumn 717-720, Issue , 2012, Pages 1287-1290

  Raghothamachar, Balaji ^a   Dalmau, Rafael ^b   Moody, Baxter ^b   Craft, Spalding ^b   Schlesser, Raoul ^b   Xie, Jinqiao ^b   Collazo, Ramón ^b,c   Dudley, Michael ^a   Sitar, Zlatko ^b,c  

^a Stony Brook University   (United States)

^b HexaTech Inc   (United States)

^c North Carolina State University   (United States)

Author keywords

Aluminum nitride; Bulk growth; Dislocations; Physical vapor transport; X ray topography

Indexed keywords

ALUMINUM NITRIDE; DISLOCATIONS (CRYSTALS); GRAIN BOUNDARIES; III-V SEMICONDUCTORS; SILICON CARBIDE; SILICON WAFERS; SINGLE CRYSTALS; SUBSTRATES; TOPOGRAPHY;

BASAL PLANE DISLOCATIONS; BULK GROWTH; CRYSTALLINE PERFECTION; LOW ANGLE GRAIN BOUNDARIES; PHYSICAL VAPOR TRANSPORT; SYNCHROTRON WHITE BEAM X-RAY TOPOGRAPHIES; THREADING DISLOCATION; X-RAY TOPOGRAPHY;

X RAYS;

EID: 84861414425     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.717-720.1287     Document Type: Conference Paper

References (10)

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