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Volumn 717-720, Issue , 2012, Pages 301-304
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Characterization of annealed HPSI 4H-SiC for photoconductive semiconductor switches
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Author keywords
Microwave photoconductivity decay; Photoconductive semiconductor switch; Recombination lifetime
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Indexed keywords
ANNEALING;
ENERGY TRANSFER;
NEODYMIUM LASERS;
PHOTOCONDUCTIVE SWITCHES;
PHOTOCONDUCTIVITY;
SEMICONDUCTOR SWITCHES;
SILICON CARBIDE;
WIDE BAND GAP SEMICONDUCTORS;
YTTRIUM ALUMINUM GARNET;
ANNEALED MATERIALS;
HIGH-PURITY SEMI-INSULATING;
MICROWAVE PHOTOCONDUCTIVITY DECAYS;
MICROWAVE PROBES;
ND:YAG PULSED LASER;
ON-STATE RESISTANCE;
PHOTOCONDUCTIVE SEMICONDUCTOR SWITCHES;
RECOMBINATION LIFETIME;
SEMICONDUCTING SILICON COMPOUNDS;
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EID: 84861411189
PISSN: 02555476
EISSN: 16629752
Source Type: Book Series
DOI: 10.4028/www.scientific.net/MSF.717-720.301 Document Type: Conference Paper |
Times cited : (11)
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References (6)
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