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Volumn 717-720, Issue , 2012, Pages 301-304

Characterization of annealed HPSI 4H-SiC for photoconductive semiconductor switches

Author keywords

Microwave photoconductivity decay; Photoconductive semiconductor switch; Recombination lifetime

Indexed keywords

ANNEALING; ENERGY TRANSFER; NEODYMIUM LASERS; PHOTOCONDUCTIVE SWITCHES; PHOTOCONDUCTIVITY; SEMICONDUCTOR SWITCHES; SILICON CARBIDE; WIDE BAND GAP SEMICONDUCTORS; YTTRIUM ALUMINUM GARNET;

EID: 84861411189     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.717-720.301     Document Type: Conference Paper
Times cited : (11)

References (6)
  • 1
    • 34547739524 scopus 로고    scopus 로고
    • 6H-sic photoconductive switches triggered at below bandgap wavelengths
    • J. S. Sullivan and J. R. Stanley, "6H-SiC Photoconductive Switches Triggered at Below Bandgap Wavelengths," IEEE Trans. Ins., 14, 4 (2007) 980-985.
    • (2007) IEEE Trans. Ins., 14 , vol.4 , pp. 980-985
    • Sullivan, J.S.1    Stanley, J.R.2
  • 5
    • 33845772303 scopus 로고    scopus 로고
    • Effects of annealing on carrier lifetime in 4H-sic
    • J. R. Jenny et al., "Effects of annealing on carrier lifetime in 4H-SiC," Journal of Applied Physics, 100, (2006) 1-6.
    • (2006) Journal of Applied Physics , vol.100 , pp. 1-6
    • Jenny, J.R.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.