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Volumn 50, Issue 4, 2012, Pages 331-337
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Effect of composition on electrical properties of multifunctional silicon nitride films deposited at temperatures below 200°C
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Author keywords
Dielectric; Low temperature; PE CVD; Photonic device; Silicon nitride
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Indexed keywords
BREAKDOWN FIELD;
BULK RESISTIVITY;
DIELECTRIC AND OPTICAL PROPERTIES;
FILM COMPOSITION;
GATE DIELECTRIC LAYERS;
LOW TEMPERATURES;
MAXIMUM VALUES;
PHOTOLUMINESCENCE CHARACTERISTICS;
PROCESS TEMPERATURE;
RF PLASMA;
SHORTER WAVELENGTH;
SILICON NITRIDE FILM;
SOURCE GAS;
STOICHIOMETRIC COMPOSITIONS;
DIELECTRIC MATERIALS;
GATE DIELECTRICS;
NITROGEN;
OPTICAL PROPERTIES;
PHOTONIC DEVICES;
SILICON NITRIDE;
STOICHIOMETRY;
THIN FILM TRANSISTORS;
ELECTRIC PROPERTIES;
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EID: 84861327449
PISSN: 17388228
EISSN: None
Source Type: Journal
DOI: 10.3365/KJMM.2012.50.4.331 Document Type: Article |
Times cited : (2)
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References (12)
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