메뉴 건너뛰기




Volumn 50, Issue 4, 2012, Pages 331-337

Effect of composition on electrical properties of multifunctional silicon nitride films deposited at temperatures below 200°C

Author keywords

Dielectric; Low temperature; PE CVD; Photonic device; Silicon nitride

Indexed keywords

BREAKDOWN FIELD; BULK RESISTIVITY; DIELECTRIC AND OPTICAL PROPERTIES; FILM COMPOSITION; GATE DIELECTRIC LAYERS; LOW TEMPERATURES; MAXIMUM VALUES; PHOTOLUMINESCENCE CHARACTERISTICS; PROCESS TEMPERATURE; RF PLASMA; SHORTER WAVELENGTH; SILICON NITRIDE FILM; SOURCE GAS; STOICHIOMETRIC COMPOSITIONS;

EID: 84861327449     PISSN: 17388228     EISSN: None     Source Type: Journal    
DOI: 10.3365/KJMM.2012.50.4.331     Document Type: Article
Times cited : (2)

References (12)
  • 3
    • 0036529302 scopus 로고    scopus 로고
    • A. J. Nozik, Phys E, 14, 115 (2002).
    • (2002) Phys E , vol.14 , pp. 115
    • Nozik, A.J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.