메뉴 건너뛰기




Volumn 34, Issue 1, 2012, Pages

Resonant photoemission at the O1s threshold to characterize β-Ga 2O 3 single crystals

Author keywords

[No Author keywords available]

Indexed keywords

ANTI-RESONANCE; AT RESONANCE; AUGER DECAYS; BROAD BANDS; FINAL STATE; LOCALIZED CHARGE; O K-EDGES; PARTIAL DENSITY OF STATE; RESONANT PHOTOEMISSION; SMALL POLARONS; SPECTROSCOPIC INVESTIGATIONS; VALENCE STATE;

EID: 84861304889     PISSN: 17578981     EISSN: 1757899X     Source Type: Conference Proceeding    
DOI: 10.1088/1757-899X/34/1/012002     Document Type: Conference Paper
Times cited : (52)

References (18)
  • 11
    • 0038502000 scopus 로고    scopus 로고
    • Study of the dielectric properties near the band gap by VEELS: Gap measurement in bulk materials
    • DOI 10.1016/S0304-3991(03)00116-5
    • Schamm S and Zanch G 2003 Ultramicroscopy 96 559-564 (Pubitemid 36835795)
    • (2003) Ultramicroscopy , vol.96 , Issue.3-4 , pp. 559-564
    • Schamm, S.1    Zanchi, G.2
  • 12
    • 0039395841 scopus 로고
    • 10.1103/PhysRev.120.67 0031-899X
    • Goodenough J B 1960 Phys. Rev. 120 67-83
    • (1960) Phys. Rev. , vol.120 , pp. 67-83
    • Goodenough, J.B.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.