|
Volumn 258, Issue 18, 2012, Pages 6977-6981
|
Direct radiative recombination in the Se-terminated nanoscale Si porous structure
|
Author keywords
Direct radiative recombination; Nanoscale Si porous structure; Near infrared emission; Recombination lifetime; Selenization treatment
|
Indexed keywords
ENERGY GAP;
INFRARED DEVICES;
NANOSTRUCTURES;
POROSITY;
SELENIUM COMPOUNDS;
SURFACE TREATMENT;
NEAR-INFRARED EMISSIONS;
POROUS STRUCTURES;
RADIATIVE RECOMBINATION;
RECOMBINATION LIFETIME;
SELENIZATION;
POROUS SILICON;
|
EID: 84861092431
PISSN: 01694332
EISSN: None
Source Type: Journal
DOI: 10.1016/j.apsusc.2012.03.146 Document Type: Article |
Times cited : (3)
|
References (28)
|