Surface treatment of CIS solar cells grown under Cu-excess

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2011, Pages 000337-000342

  Depredurand, Valérie ^a   Aida, Yasuhiro ^a,b   Larsen, Jes ^a   Eisenbarth, Tobias ^a   Majerus, Alain ^a   Siebentritt, Susanne ^a  

^a UNIVERSITY OF LUXEMBOURG   (Luxembourg)

^b TDK CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BULK RECOMBINATION; CAPACITANCE VOLTAGE MEASUREMENTS; CELL PERFORMANCE; CO-EVAPORATIONS; CU(IN , GA)SE; CU-POOR; SECONDARY PHASE; SELENIUM VAPOR; SINGLE-PHASE MATERIALS; SPACE CHARGE REGIONS; SURFACES AND INTERFACES;

AUGER ELECTRON SPECTROSCOPY; COPPER COMPOUNDS; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; GALLIUM; OPEN CIRCUIT VOLTAGE; PHOTOVOLTAIC EFFECTS; SELENIUM; SURFACE TREATMENT; TRANSPORT PROPERTIES; VAPORS;

NANOSTRUCTURED MATERIALS;

EID: 84861076964     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2011.6185953     Document Type: Conference Paper

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