Hybrid, chemically passivated n-type silicon/PEDOT:PSS semiconductor- insulator-semiconductor solar cell

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2011, Pages 002492-002496

  Har Lavan, Rotem ^a   Joshi, Pranav ^a   Yaffe, Omer ^a   Levine, Igal ^a   Cahen, David ^a  

^a WEIZMANN INSTITUTE OF SCIENCE   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTIVE POLYMER; HIGH-SHEET-RESISTANCE; HYBRID INORGANIC-ORGANIC; HYBRID INTERFACE; INSULATING FILM; MINORITY CARRIER; N TYPE SILICON; PEDOT:PSS; PHOTOGENERATED CURRENT; ROOM TEMPERATURE;

INTERFACES (MATERIALS); PASSIVATION; PHOTOVOLTAIC EFFECTS; SILICON;

CONDUCTING POLYMERS;

EID: 84861047502     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2011.6186452     Document Type: Conference Paper

References (12)

1. J. Shewchun, M. A. Green, and F. D. King, "Minority-carrier MIS tunnel-diodes and their application to electron-voltaic and photo-voltaic energy-conversion. 2. Experiment," Solid-State Electronics, vol. 17, no. 6, pp. 563-572, 1974.
2. R. J. Stirn and Y. C. M. YEH, "Solar and laser energy conversion with Schottky barrier solar cells," in Photovoltaic Specialists Conference, 10 th, Palo Alto, Calif, 1974, p. 15-24.
3. S. J. Fonash, "The role of the interfacial layer in metal-semiconductor solar cells," Journal of Applied Physics, vol. 46, no. 3, p. 1286, 1975.
4. M. A. Green, F. D. King, and J. Shewchun, "minority-carrier MIS tunnel-diodes and their application to electron-voltaic and photo-voltaic energy-conversion. 1. Theory," Sol Stat Elec, vol. 17, no. 6, pp. 551-561, 1974.
5. M. Wittmer and J. L. Freeouf, "Ideal Schottky diodes on passivated silicon," Physical Review Letters, vol. 69, no. 18, p. 2701, Nov. 1992.
6. O. Yaffe et al., "Molecular Electronics at Metal/Semiconductor Junctions. Si Inversion by Sub-Nanometer Molecular Films," Nano Letters, vol. 9, no. 6, pp. 2390-2394, Jun. 2009.
7. J. Shewchun, D. Burk, and M. B. Spitzer, "MIS and SIS solar cells," IEEE Transactions on Electron Devices, vol. 27, p. 705-716, 1980.
8. H. B. Akkerman, P. W. M. Blom, D. M. De Leeuw, and B. De Boer, "Towards molecular electronics with largearea molecular junctions," Nature, vol. 441, no. 7089, p. 69-72, 2006.
9. J. Y. Kim, J. H. Jung, D. E. Lee, and J. Joo, "Enhancement of electrical conductivity of poly(3,4-ethylenedioxythiophene)/poly(4- styrenesulfonate) by a change of solvents," Synthetic Metals, vol. 126, no. 2-3, pp. 311-316, Feb. 2002.
10. J. S. Kim et al., "Kelvin probe and ultraviolet photoemission measurements of indium tin oxide work function: a comparison," Synthetic Metals, vol. 111-112, pp. 311-314, Jun. 2000.
11. C. Sommerhalter, T. W. Matthes, T. Glatzel, A. J̈ger-Waldau, and M. C. Lux-Steiner, "High-sensitivity quantitative Kelvin probe microscopy by noncontact ultra-high-vacuum atomic force microscopy," Applied Physics Letters, vol. 75, no. 2, p. 286, 1999.
12. R. B. Godfrey and M. A. Green, "655 mV open-circuit voltage, 17.6% efficient silicon MIS solar cells,"Applied Physics Letters, vol. 34, p. 790, 1979.