GaAs substrate misorientation and the effect on InAs quantum dot critical thickness

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2011, Pages 002633-002638

  Mackos, Chelsea R ^a   Forbes, David V ^a   Polly, Stephen ^a   Podell, Adam ^a   Dai, Yushuai ^a   Bailey, Christopher G ^a   Hubbard, Seth M ^a  

^a ROCHESTER INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

[110] DIRECTION; AFM; ATOMIC FORCE; CRITICAL THICKNESS; DEVICE PERFORMANCE; GAAS; GAAS SUBSTRATES; I-V MEASUREMENTS; INAS; INAS QUANTUM DOTS; MATERIAL PROPERTY; ORGANOMETALLIC VAPOR PHASE EPITAXY; PHOTOVOLTAIC; SINGLE JUNCTION SOLAR CELLS; SPECTRAL RESPONSIVITY; STRANSKI-KRASTANOV GROWTH; SUBSTRATE MISORIENTATION; TEST STRUCTURE;

GALLIUM ARSENIDE; INDIUM ARSENIDE; IODINE; ORGANOMETALLICS; SEMICONDUCTOR QUANTUM DOTS; SUBSTRATES;

PHOTOVOLTAIC EFFECTS;

EID: 84861056081     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2011.6186489     Document Type: Conference Paper

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