Quinhydrone chemical passivation of a silicon surface for minority carrier bulk-lifetime measurements

International Journal of Photoenergy

Volumn 2012, Issue , 2012, Pages

  Solcansky, M ^a,b   Vanek, J ^a   Poruba, A ^b  

^a BRNO UNIVERSITY OF TECHNOLOGY   (Czech Republic)

^b Solartec Sro   (Czech Republic)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER LIFETIME; CLEANING; PASSIVATION;

BULK LIFETIME; CHARACTERIZATION METHODS; CHEMICAL PASSIVATION; EFFECTIVE CARRIER LIFETIMES; LIFETIME MEASUREMENTS; MEASUREMENTS OF; MINORITY CARRIER; QUINHYDRONE; SILICON SURFACES; SURFACE RECOMBINATION VELOCITIES;

SILICON WAFERS;

EID: 84861029950     PISSN: 1110662X     EISSN: 1687529X     Source Type: Journal    
DOI: 10.1155/2012/732647     Document Type: Article

References (4)

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2. Hasegawa H., Sato T., Kasai S., Adamowicz B., Hashizume T., Dynamics and control of recombination process at semiconductor surfaces, interfaces and nano-structures Solar Energy 2006 80 6 629 644 (Pubitemid 43782485)
3. Takato H., Sakata I., Shimokawa R., Quinhydrone/Methanol treatment for the measurement of carrier lifetime in silicon substrates Japanese Journal Of Applied Physic 2001 40 1003 1004
4. Takato H., Sakata I., Shimokawa R., Surface passivation effect of silicon substrates due to quinhydrone/methanol treatment Japanese Journal Of Applied Physics 2002 41 870 872