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Volumn , Issue , 2011, Pages 001108-001112
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Compatibility of the alternative seed layer (ASL) process with mono-Si and poly-Si substrates patterned by laser or wet etching
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Author keywords
[No Author keywords available]
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Indexed keywords
CROSS SECTION;
ENERGY DISPERSIVE X RAY SPECTROSCOPY;
LOW COSTS;
LOW RESISTIVITY;
METAL CONTACTS;
NICKEL DEPOSITION;
NICKEL SILICIDE;
NISI LAYERS;
PATTERNING METHODS;
SCREEN-PRINTING PROCESS;
SEED LAYER;
SILICON SURFACES;
ASPECT RATIO;
CONTACT RESISTANCE;
ELECTRIC CONTACTORS;
MONOCRYSTALLINE SILICON;
OHMIC CONTACTS;
PHOTOELECTRONS;
PHOTOVOLTAIC EFFECTS;
POLYSILICON;
SCANNING ELECTRON MICROSCOPY;
SILICIDES;
WET ETCHING;
X RAY PHOTOELECTRON SPECTROSCOPY;
X RAY SPECTROSCOPY;
NICKEL;
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EID: 84861022109
PISSN: 01608371
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/PVSC.2011.6186146 Document Type: Conference Paper |
Times cited : (2)
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References (10)
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