Investigation of unusual shunting behavior due to phototransistor effect in n-type aluminum-alloyed rear junction solar cells

Solar Energy Materials and Solar Cells

Volumn 93, Issue 11, 2009, Pages 1986-1993

  Sugianto, Adeline ^a   Tjahjono, Budi S ^a   Mai, Ly ^a   Wenham, Stuart R ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

Aluminum alloyed rear junction; Laser doping; N type silicon solar cells; Phototransistors; Schottky contacts; Shunting effect

Indexed keywords

CELL STRUCTURE; COMMERCIAL PRODUCTIONS; DARK CONDITIONS; FILL FACTOR; HIGH EFFICIENCY; LASER DOPING; N TYPE SILICON; N-TYPE SILICON SOLAR CELLS; P-TYPE SILICON WAFERS; SCHOTTKY CONTACTS; SCREEN-PRINTED; SELECTIVE EMITTERS; SHUNTING EFFECT;

ALUMINA; ALUMINUM; CELL MEMBRANES; DOPING (ADDITIVES); ELECTRIC CURRENT MEASUREMENT; LASERS; PHOTOTRANSISTORS; PHOTOVOLTAIC CELLS; SEMICONDUCTING SILICON COMPOUNDS; SILICON SOLAR CELLS; SOLAR CELLS; SWITCHING CIRCUITS;

SILICON WAFERS;

EID: 69949179588     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2009.07.018     Document Type: Article

References (13)

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