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Volumn 108, Issue 19, 2012, Pages

Electrical control of interdot electron tunneling in a double InGaAs quantum-dot nanostructure

(12) Muller K a Bechtold, A a Ruppert, C b Zecherle, M c Reithmaier, G a Bichler, M a Krenner, H J d Abstreiter, G a Holleitner, A W a Villas Boas, J M e Betz, M b Finley, J J a

a WALTER SCHOTTKY INSTITUT (Germany)

b TU DORTMUND UNIVERSITY (Germany)

c TECHNICAL UNIVERSITY OF MUNICH (Germany)

d UNIVERSITY OF AUGSBURG (Germany)

e FEDERAL UNIVERSITY OF UBERLÂNDIA (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL CONTROL; HOLE TUNNELING; INELASTIC PROCESS; ORBITAL STATE; PHONON COUPLING; PHOTOGENERATED CHARGE CARRIERS; PUMP-PROBE SPECTRA; RELATIVE ENERGIES; TEMPORAL EVOLUTION; ULTRA-FAST; ULTRAFAST PUMP-PROBE SPECTROSCOPY; WIDE BANDWIDTH;

PROBES; SEMICONDUCTOR QUANTUM DOTS; SPECTROSCOPY;

ELECTRON TUNNELING;

EID: 84860728330 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.108.197402 Document Type: Article

Times cited : (86)

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