Electronic states in epitaxial graphene fabricated on silicon carbide

Semiconductors

Volumn 45, Issue 8, 2011, Pages 1070-1076

  Davydov, S Yu ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84860424198     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/S1063782611080057     Document Type: Article

References (32)

1. A. H. Castro Neto, F. Guinea, N. M. R. Peres, K. S. Novoselov, and A. K. Gleim, Rev. Mod. Phys. 81, 109 (2008).
2. D. V. Badami, Carbon 3, 53 (1965).
3. A. J. van Bommel, Surf. Sci. 48, 463 (1975).
4. A. Charrier, A. Coati, T. Argunova, F. Thibaudau, Y. Garreau, R. Pinchaux, I. Forbeaux, J.-M. Debever, M. Sauvage-Simkin, and J.-M. Themlin, J. Appl. Phys. 92, 2479 (2002).
5. C. Berger, Z. Song, T. Li, A. Y. Ogbazghi, R. Feng, Z. Dai, A. N. Marchenkov, E. H. Conrad, P. N. First, and W. A. de Heer, J. Phys. Chem. B 108, 19912 (2004).
6. E. Rollings, G.-H. Gweon, S. Y. Zhou, B. S. Mun, J. L. McChesney, B. S. Hussain, A. V. Fedorov, P. N. First, W. A. de Heer, and A. Lanzara, arXiv: condmat/0512226, v. 2 (2006).
7. S. Yu. Davydov, A. A. Lebedev, and N. Yu. Smirnova, Fiz. Tverd. Tela 51, 452 (2009) [Phys. Solid State 51, 481 (2009)].
8. C. Riedel, C. Coletri, T. Iwasaki, A. A. Zakharov, and U. Starke, Phys. Rev. Lett. 103, 246804 (2009).
9. J. Soltys, J. Piechota, M. Lopuszynski, and S. Krukowski, arXiv: 1002. 4717.
10. S. Yu. Davydov and A. A. Lebedev, Pis'ma Zh. Tekh. Fiz. 36(18), 55 (2010) [Tech. Phys. Lett. 36, 856 (2010)].
11. W. Chen, S. Chen, D. Chen Qj, X. Y. Gao, and A. T. S. Wee, J. Am. Chem. Soc. 129, 10422 (2007).
12. H. Pinto, R. Jones, J. P. Gross, and P. R. Briddon, J. Phys.: Condens. Matter. 21, 402001 (2009).
13. C. Coleti, C. Riedel, D. S. Lee, B. Krauss, L. Patthey, K. von Klitzing, J. H. Smet, and U. Starke, Phys. Rev. B 81, 235401 (2010).
14. S. Yu. Davydov, Fiz. Tekh. Poluprovodn. 45, 629 (2011) [Semiconductors 45, 618 (2011)].
15. P. W. Anderson, Phys. Rev. 124, 41 (1961).
16. D. M. Newns, Phys. Rev. 178, 1123 (1969).
17. F. D. M. Haldane and P. W. Anderson, Phys. Rev. B 13, 2553 (1976).
18. S. Yu. Davydov and S. V. Troshin, Fiz. Tverd. Tela 49, 1508 (2007) [Phys. Solid State 49, (2007)].
19. S. Yu. Davydov, Fiz. Tekh. Poluprovodn. 31, 1236 (1997) [Semiconductors 31, 1062 (1997)].
20. S. Yu. Davydov, Fiz. Tekh. Poluprovodn. 41, 718 (2007) [Semiconductors 41, 696 (2007)].
21. A. Mattausch and O. Pankratov, Phys. Rev. Lett. 99, 076802 (2007).
22. W. Chen, S. Chen, D. Chen Qj, X. Y. Gao, and A. T. S. Wee, J. Am. Chem. Soc. 129, 10422 (2007).
23. I. Giertz, C. Riedl, U. Starke, C. R. Ast, and K. Kern, Nano Lett. 8, 4603 (2008).
24. Y.-J. Yu, Y. Zhao, S. Ryu, L. E. Brus, K. S. Kin, and P. Kim, Nano Lett. 9, 3430 (2009).
25. N. Park, B.-K. Kim, J.-O. Lee, and J.-J. Kim, Appl. Phys. Lett. 95, 243105 (2009).
26. S. Yu. Davydov and G. I. Sabirova, Fiz. Tverd. Tela 53, 608 (2011) [Phys. Solid State 53, 654 (2011)].
27. S. Yu. Davydov and G. I. Sabirova, Pis'ma Zh. Tekh. Fiz. 36(24), 77 (2010) [Tech. Phys. Lett. 36, 1154 (2010)].
28. S. Y. Zhou, G.-H. Gweon, A. V. Fedorov, P. N. First, W. A. de Heer, D.-H. Lee, F. Guinea, A. H. Castro Neto, and A. Lanzara, Nature Mater. 6, 770 (2007).
29. L. Vitalis, C. Riedl, R. Ohmann, I. Brihuega, U. Starake, and K. Kern, Surf. Sci. 602, L127 (2008).
30. T. Seyller, A. Bostwick, K. V. Emtsev, K. Horn, L. Ley, J. L. McChesney, T. Ohta, J. D. Riley, E. Rotenberg, and F. Speck, Phys. Status Solidi B 245, 1436 (2008).
31. O. Pankratov, S. Hendel, and M. Bockstedte, arXiv: 1009. 2185.
32. S. Kopylov, A. Tzalenchuk, S. Kubatkin, and V. I. Val'ko, Appl. Phys. Lett. 97, 112109 (2010).