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Volumn 39, Issue 9, 2010, Pages 1971-1974
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Thermoelectric properties of Ag-doped Mg 2Ge thin films prepared by magnetron sputtering
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Author keywords
Ag doping; magnetron sputtering; Mg 2Ge; thermoelectric; thin films
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Indexed keywords
AG ATOMS;
AG-DOPING;
BASE LAYERS;
DOPED FILMS;
ELECTRICAL CONDUCTIVITY;
GE FILMS;
GE THIN FILMS;
GRAIN SIZE;
HEAVILY DOPED;
HIGH-PURITY;
IN-SITU;
MAGNETRON CO-SPUTTERING;
MAXIMUM VALUES;
MG 2GE;
OPTIMUM VALUE;
P-TYPE;
POWER FACTORS;
SILVER DOPED;
SILVER DOPING;
SURFACE MICROROUGHNESS;
TEMPERATURE EFFECTS;
TEMPERATURE RANGE;
THERMOELECTRIC;
THERMOELECTRIC PROPERTIES;
UNDOPED FILMS;
CARRIER CONCENTRATION;
DOPING (ADDITIVES);
ELECTRIC CONDUCTIVITY;
ELECTRIC POWER FACTOR;
FILM GROWTH;
GERMANIUM;
GRAIN GROWTH;
MAGNETRON SPUTTERING;
THIN FILMS;
VAPOR DEPOSITION;
SILVER;
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EID: 77956230066
PISSN: 03615235
EISSN: None
Source Type: Journal
DOI: 10.1007/s11664-009-1052-4 Document Type: Article |
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Times cited : (11)
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References (12)
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