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Journal of Crystal Growth

Volumn 312, Issue 16-17, 2010, Pages 2328-2334

High quality Mg2Sn crystals prepared by RF induction melting

(2) Chen, H Y a Savvides, N b

a CSIRO (Australia)

b UNIVERSITY OF NEW SOUTH WALES (Australia)

Author keywords

A1. Crystal growth; A2. RF induction melting; B2. Mg2Sn compound; B2. Thermoelectric material

Indexed keywords

B2. MG2SN COMPOUND; BRIDGMAN; BRIDGMAN METHODS; ELECTRICAL CONDUCTIVITY; ELECTRICAL TRANSPORT PROPERTIES; ENERGY DISPERSIVE X RAY SPECTROSCOPY; HALL COEFFICIENT; HIGH QUALITY; HIGH QUALITY CRYSTALS; INDUCTION MELTING; RADIO FREQUENCIES; RESISTIVE FURNACES; RF INDUCTION; SECONDARY PHASIS; SN-DOPED; SUBMICRON; THERMOELECTRIC COMPOUND; THERMOELECTRIC FIGURE OF MERIT; THERMOELECTRIC MATERIAL;

CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; GRAIN BOUNDARIES; INGOTS; MELTING; SCANNING ELECTRON MICROSCOPY; SILVER; THERMAL CONDUCTIVITY; THERMOELECTRIC EQUIPMENT; TIN; X RAY DIFFRACTION; X RAY SPECTROSCOPY;

CRYSTAL GROWTH FROM MELT;

EID: 77955275025 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2010.05.011 Document Type: Article

Times cited : (34)

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