Fabrication of graphene directly on SiO 2 without transfer processes by annealing sputtered amorphous carbon

Japanese Journal of Applied Physics

Volumn 51, Issue 4 PART 2, 2012, Pages

  Sato, Motonobu ^a   Inukai, Manabu ^b   Ikenaga, Eiji ^b   Muro, Takayuki ^b   Ogawa, Shuichi ^c   Takakuwa, Yuji ^c   Nakano, Haruhisa ^a   Kawabata, Akio ^a   Nihei, Mizuhisa ^a   Yokoyama, Naoki ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b JAPAN SYNCHROTRON RADIATION RESEARCH INSTITUTE   (Japan)

^c TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CO CATALYSTS; EPITAXIAL STRUCTURE; GRAPHENE SHEETS; HIGHLY ORIENTED PYROLYTIC GRAPHITE; TRANSFER PROCESS;

AMORPHOUS CARBON; CATALYSTS; CHEMICAL VAPOR DEPOSITION; MULTILAYERS;

GRAPHENE;

EID: 84860362640     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.51.04DB01     Document Type: Article

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