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Volumn 4, Issue 4, 2012, Pages 1883-1886

Crystal structure and phototransistor behavior of N-substituted heptacence

Author keywords

device fabrication; N substituted heptacene; phototransistor; single crystal; structure

Indexed keywords

DEVICE FABRICATIONS; N-SUBSTITUTED HEPTACENE; PHOTOCONDUCTIVE EFFECT; SIGNAL AMPLIFICATIONS; SINGLE CRYSTAL X-RAY STRUCTURES;

EID: 84860334250     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am3003389     Document Type: Article
Times cited : (115)

References (34)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.