High sensitivity low field magnetically gated resistive switching in CoFe 2O 4/La 0.66Sr 0.34MnO 3 heterostructure

Applied Physics Letters

Volumn 100, Issue 17, 2012, Pages

  Thakare, Vishal ^a,b   Xing, Guozhong ^c   Peng, Haiyang ^c   Rana, Abhimanyu ^a,b   Game, Onkar ^a,b   Anil Kumar, P ^d   Banpurkar, Arun ^b   Kolekar, Yesappa ^b,e   Ghosh, Kartik ^e   Wu, Tom ^c   Sarma, D D ^d,f,g,h   Ogale, Satishchandra B ^a,i  

^a NATIONAL CHEMICAL LABORATORY   (India)

^b UNIVERSITY OF PUNE   (India)

^c NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^d DEPARTMENT OF MATERIALS SCIENCE   (India)

^e MISSOURI STATE UNIVERSITY   (United States)

^f INDIAN INSTITUTE OF SCIENCE   (India)

^g JAWAHARLAL NEHRU CENTRE FOR ADVANCED SCIENTIFIC RESEARCH   (India)

^h UPPSALA UNIVERSITY   (Sweden)

ⁱ INDIAN INSTITUTE OF SCIENCE EDUCATION AND RESEARCH   (India)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH SENSITIVITY; INTERFACE EFFECT; LOW FIELD; LOW MAGNETIC FIELDS; MAGNETIC OXIDES; NONMAGNETICS; OXIDE INTERFACES; RESISTIVE SWITCHING; ROOM TEMPERATURE; TUNABILITIES;

MAGNETIC FIELDS; SWITCHING SYSTEMS;

MANGANESE OXIDE;

EID: 84860333962     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4707373     Document Type: Article

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