Correlation between strain and the metal-insulator transition in epitaxial V2O3 thin films grown by Molecular Beam Epitaxy

Thin Solid Films

Volumn 520, Issue 14, 2012, Pages 4730-4733

  Dillemans, L ^a   Lieten, R R ^a   Menghini, M ^a   Smets, T ^a   Seo, J W ^a   Locquet, J P ^a  

^a UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

MBE; Metal insulator transition; Oxide thin films

Indexed keywords

BULK PHASE DIAGRAMS; BULK-LIKE; DEPOSITED FILMS; ELECTRICAL DATA; FOUR-POINT PROBE METHOD; GRAZING INCIDENCE; HIGH QUALITY; OUT-OF-PLANE; OXIDE THIN FILMS; RESISTIVITY MEASUREMENT; ROOM-TEMPERATURE RESISTIVITY; ROOT MEAN SQUARE ROUGHNESS; STRAIN STATE; X-RAY DIFFRACTION MEASUREMENTS;

DEPOSITION; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; PHASE DIAGRAMS; SEMICONDUCTOR INSULATOR BOUNDARIES; THIN FILMS; VAPOR DEPOSITION; X RAY DIFFRACTION;

ELECTRIC PROPERTIES;

EID: 84860289227     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.11.064     Document Type: Conference Paper

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