Epitaxial growth of V2O3on Al2O 3by reactive MBE

Materials Research Society Symposium Proceedings

Volumn 1292, Issue , 2011, Pages 61-66

  Dillemans, Leander ^a   Tran, Tuan ^a   Bhuiyan, Md Nurul Kabir ^a   Smets, Tomas ^a   Menghini, Mariela ^a   Lieten, Ruben ^a   Seo, Jin Won ^a   Locquet, Jean Pierre ^a  

^a UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC OXYGEN; POSSIBLE FUTURES; STRONGLY CORRELATED ELECTRON SYSTEM; SUBSTRATE TEMPERATURE; VANADIUM OXIDES;

EPITAXIAL FILMS; METAL INSULATOR BOUNDARIES; METAL INSULATOR TRANSITION; MOLECULAR BEAM EPITAXY; MOLECULAR OXYGEN; SEMICONDUCTOR INSULATOR BOUNDARIES; VANADIUM; VANADIUM COMPOUNDS;

EPITAXIAL GROWTH;

EID: 80053176409     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/opl.2011.301     Document Type: Conference Paper

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