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Solid State Communications

Volumn 152, Issue 11, 2012, Pages 960-963

Effect of substrate temperature on few-layer graphene grown on Al 2O 3 (0 0 0 1) via direct carbon atoms deposition

(6) Liu, Zhongliang a,b Tang, Jun b,c Kang, Chaoyang b Zou, Chongwen b Yan, Wensheng b Xu, Pengshou b

a HUAIBEI NORMAL UNIVERSITY (China)

b UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA (China)

c Hefei IRICO Epilight Technology Co Ltd (China)

Author keywords

A. Few layer graphene; B. Substrate temperature; D. growth behavior; E. Synchrotron radiation

Indexed keywords

CARBON ATOMS; CRYSTALLINE QUALITY; E. SYNCHROTRON RADIATION; FEW-LAYER GRAPHENE; GROWTH BEHAVIOR; GROWTH MECHANISMS; LAYER FORMATION; LAYER NUMBER; NEAR-EDGE X-RAY ABSORPTION; SOLID-SOURCE MOLECULAR BEAM EPITAXY; SUBSTRATE TEMPERATURE;

ALUMINUM; GRAPHENE; RAMAN SPECTROSCOPY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; STRUCTURAL PROPERTIES;

SUBSTRATES;

EID: 84860284422 PISSN: 00381098 EISSN: None Source Type: Journal
DOI: 10.1016/j.ssc.2012.02.027 Document Type: Article

Times cited : (10)

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